| PART |
Description |
Maker |
| IS63LV1024 IS63LV1024L-12T IS63LV1024L-8TI IS63LV1 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 8 ns, PDSO32
TRANS PNP W/RES 50HFE NS-B1 128K X 8 STANDARD SRAM, 12 ns, PBGA36
TRANS PNP W/RES 30HFE NS-B1 128K X 8 STANDARD SRAM, 10 ns, PDSO32
TRANS PNP W/RES 60HFE NS-B1
CAP CERAMIC 330PF 50V NP0 0805
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| DS1339U-33 DS1339U-33_ DS1339 DS1339C-2 DS1339C-2_ |
I2C Serial Real-Time Clock
TRANS NPN BIPOL DUAL 160V SOT363
TRANS NPN DARL 40V SMD SOT-23
TRANSISTOR, NPN, SWITCHING , GENERAL PURPOSE, 3-PIN SOT-23
TRANS NPN 160V 350MW SMD SOT-23
|
MAXIM - Dallas Semiconductor
DALLAS[Dallas Semiconductor]
Dallas Semiconducotr
http://
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
| WP-MK-X2011-868 RS-MK-X2010 WP-MK-X2010-434 WP-MK- |
MOSFET DUAL N-CHAN 20V SOT-26
TRANS NPN BIPOLAR 300MW SOT26
TRANS PNP BIPOLAR 300MW SOT26
TRANSISTOR NPN 40V SOT363
High Integrity FM Transceiver
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Round Solutions
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| 2N5229 2N5230 |
Trans GP BJT PNP 25V 3-Pin TO-92 Box
Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R
|
New Jersey Semiconductor
|
| ISD4003-06MEI ISD4003-06MPI ISD4003-06MXD ISD4003- |
240 SEC, SPEECH SYNTHESIZER WITH RCDG, PBGA19
RES 150K OHM 1/6W 5% CARBON FILM 单芯片语音记播放设备4 - - - ，和8分钟工期
Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations 单芯片语音记播放设备4 - - 6 - ，和8分钟工期
RES 130K OHM 1/6W 5% CARBON FILM 单芯片语音记播放设备4 - - - ，和8分钟工期
RES 100 OHM 1/6W 5% CARBON FILM
RES 13 OHM 1/6W 5% CARBON FILM
RES 110K OHM 1/6W 5% CARBON FILM
RES 13K OHM 1/6W 5% CARBON FILM
CAP 1000PF 1KV CERAMIC X7R 1812
|
WINBOND ELECTRONICS CORP
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| BC548 |
Trans GP BJT NPN 30V 0.1A 3-Pin TO-92
NPN General Purpose Amplifier
|
New Jersey Semiconductors
New Jersey Semi-Conduct...
|
| CIT8050 CIT8050A CIT8050B CIT8050C CIT8050D |
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 60 - 400 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 60 - 120 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 85 - 170 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 120 - 240 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 200 - 400 hFE
|
Continental Device India Limited
|
| CN451 CN450 |
General Purpose Transistors designed for Small and Medium Signal Amplification from D.C to Radio Frequencies
0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 50 - 150 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.000A Ic, 100 - 300 hFE
|
Continental Device Indi...
CDIL[Continental Device India Limited]
|
